GaN photovoltaic panel efficiency

It offers a high power density of 1.1 kW/L and an efficiency of 97% (compared to 0.3 kW/L and 95% for conventional technologies using silicon components).

To gain a boost in total system efficiency when using solar power, many engineers are switching to GaN FETs in their solar inverter designs. There are three main steps where efficiency plays a major role when converting sunlight into usable electricity. The first and most obvious is the photovoltaic process itself.

GaN achieves ultra-low switching loss at high switching frequency and is therefore a superior choice for both system efficiency and power density. Renewable energy systems using GaN power transistors do not needlessly waste solar energy during the conversion process.

Researchers working on renewable energy resources have focused on gallium-nitride (GaN) based-materials, which have big potential for full-color solar cells and LEDs. Among their limitations, however, has been the poor efficiency of long-wavelength devices, known as the green gap problem.

Benefits of GaN over silicon. Overall efficiency ~98%. Higher switching frequency allows for. smaller magnetics, allowing for 40% size reduction. Over 2x the power density of equivalent Si-based designs. 20cm x 20cm x 4cm.

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GaN photovoltaic panel efficiency

GaN photovoltaic panel efficiency

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