Photovoltaic channel grid plate cutting process

Can mask and plate metallization transform photovoltaic processing?

Considering cost and scaling potential, mask and plate has the potential to transform the processing of any III–V-based photovoltaic device. In III–V solar cell manufacturing, mask and plate front metallization follows MOVPE growth and replaces both a photolithography and an evaporation process sequence.

How does a high bandgap solar cell reduce thermalization losses?

The high bandgap of the top cell efficiently reduces thermalization losses, while the low-bandgap cell (s) underneath collect the remaining non-absorbed photons and thus minimize sub-bandgap losses. 109 To date, particular attention is spent on tandem solar cells using lead halide Perovskites on top of a c-Si bottom cell.

Does cutting silicon solar cells reduce Ohmic losses?

Cutting silicon solar cells from their host wafer into smaller cells reduces the output current per cut cell and therefore allows for reduced ohmic losses in series interconnection at module level. This comes with a trade-off of unpassivated cutting edges, which result in power losses.

Are mask and plate front metallization techniques suitable for III–V-based solar cells?

The similar η values underline the great potential of the mask and plate front metallization for III–V-based solar cells. Moreover, these results are in line with the simulation results predicting a similar performance of the front metallization techniques under comparison (see Fig. 5 a).

What is the metallization potential of a champion mask and plate solar cell?

The champion mask and plate solar cell achieves η =  (31.6 ± 1.1) %. This clearly demonstrates the great potential of this metallization approach for III–V//Si solar cells. Besides that, the present work identifies optimization potential for the mask and plate approach. An even higher performance is expected from grid optimizations.

How did GM and FP contribute to the development of solar cells?

G.M. performed utilized electroplating and mask removal processes. Together with J.B., she developed the galvanic processes used in this work. F.P. managed and supervised the fabrication of III–V//Si solar cell wafers and provided the team with essential input on processing of III–V-based solar cells.