Latest Solar Power Generation Gallium Arsenide
Researchers at Fraunhofer ISE have achieved a record conversion efficiency of 68.9 % for a III-V semiconductor photovoltaic cell based on gallium arsenide exposed to laser light of 858 nanometers.
Researchers at Fraunhofer ISE have achieved a record conversion efficiency of 68.9 % for a III-V semiconductor photovoltaic cell based on gallium arsenide exposed to laser light of 858 nanometers.
A Belgian-Canadian research team claims to have found a way to develop gallium arsenide (GaAs) solar cells at a lower cost while maintaining high power conversion efficiencies.
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